Engineering, 08.04.2020 04:26 krystalhurst97
If we have silicon at 300K with 10 microns of p-type doping of 4.48*10^18/cc and 10 microns of n-type doping at 1000 times less than the p-type doping, what is the resistance in ohms outside the depletion region on the n side of the junction. Use three significant digits and fixed point notation. The diode is square with an edge length of 60 microns, with a bias of 0.44V. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. Correct 24.9
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If we have silicon at 300K with 10 microns of p-type doping of 4.48*10^18/cc and 10 microns of n-typ...
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