Consider an si pnp transistor with ne = 2x10'7cm“, nb = 2x101 cm", nc= 2x1095 cm". the metallurgical base width is 1 um and the base cross sectional area is 10 um? . assume the critical field to be equal to 10° v/cm. η = 1.5x100 cm, ε = 11.7x8.854x10-14 f/ cm a) (5 points) draw the energy band diagram under equilibrium. b) (5 points) sketch the electric field, charge density, and determine the potential between the emitter and collector. c) (5 points) for veb = 0.7v, vec = 2.0v, draw the excess minority carrier densities across the emitter, base, and collector regions. d) (5 points) determine the total number of excess holes in the undepleted part of the base. e) (5 points) determine the common-base breakdown voltage.