Laser diode sources used in fiber optic communication systems operate at wavelengths around 1550 nm where the dispersion and loss of optical fibers is small. InP is the base material for laser diodes operating around 1550 nm. The bandgap of InP can be varied by replacing a fraction (x) of In lattice sites with Ga, and a fraction 25 (y) of P lattice sites with As; making the compound In1-xGaxAsyP1-y. The bandgap can be changed by varying x and y according to the formula Eg(y) [eV] = 1.35 – 0.72y + 0.12y2 for 0 y 1 and x/y = 0.45 What wavelength range does In1-xGaxAsyP1-y provide to laser diode manufacturers? Calculate the fractional amount of Ga, x, and the fractional amount of As, y, needed to produce a 1550 nm diode laser