Silica, sio2, is formed on silicon as an electrically insulating layer for microelectronic devices. silica is formed when silicon is exposed to o2 gas at an elevated temperature. at 900˚c, it takes 90 minutes for the oxygen to diffuse from the surface to form a 0.06 micron (0.06 x 10-6 m) thick layer of sio2 on

Fill in the blanks for the following statements: the rms speed of the molecules in a sample of h2 gas at 300 k will be times larger than the rms speed of o2 molecules at the same temperature, and the ratio µrms (h2) / µrms (o2) with increasing temperature. a not enough information is given to answer this question b sixteen, will not change c four, will not change d four, will increase e sixteen, will decrease