Amos device requires a gate oxide of 10 ± 0.5 nm. assume the growth is done at 900˚c in dry o2. neglect any effect of the anomalous initial growth. derive a simple expression, which gives the sensitivity of the oxide thickness tox to growth temperature t, i. e. dtox/dt. evaluate this expression to see how well controlled the furnace temperature must be in order to obtain 10 nm ± 0.5 nm at 900˚c.

Apure solvent has a vapor pressure the vapor pressure of a solution. a. equal to b. lower than c. higher than

Identify one disadvantage to each of the following models of electron configuration: -dot structures -arrow and line diagrams -written electron configurations type in your answer below. (answer) -dot structures do not show the distribution of electrons in orbitals and take up a lot of space. -arrow and line diagrams take up a lot of space and make it difficult to count electrons. -written configurations make it easy to lose count of electrons and do not show the distribution of electrons in orbitals.

Which of the following units is not an official si unit? mole liter kilogram ampere