g An oxidized silicon (111) wafer has an initial field oxide thickness of d0. Wet oxidation at 950 °C is then used to grow a thin film gate of 500 nm in 50 minutes. What is the original field oxide thickness d0 (in nm)?

Explanation:

From the information given:

oxidation of oxidized solution takes place at 950° C

For wet oxidation:

The linear and parabolic coefficient can be computed as:

Using and values obtained from the graph:

Thus;

So, the initial time required to grow oxidation is expressed as:

∴

NOW;

Thus; since we will consider the positive sign, the initial thickness is ;

≅ 0.261 μm

answer is: c. the experiment shows that the red substance experienced a chemical change.

this is chemical change (chemical reaction), because two new substances are formed (metalig liquid and gas), the atoms are rearranged and the reaction is followed by an energy change.

this is example of chemical decomposition.

chemical decomposition (analysis) is the separation of a single chemical compound into its two or more elemental parts or to simpler compounds.  

chemical decomposition is opposite of chemical synthesis.

it would be a gas formation