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Silica, sio2, is formed on silicon as an electrically insulating layer for microelectronic devices. silica is formed when silicon is exposed to o2 gas at an elevated temperature. at 900˚c, it takes 90 minutes for the oxygen to diffuse from the surface to form a 0.06 micron (0.06 x 10-6 m) thick layer of sio2 on

Acurium-245 nucleus is hit with a neutron and changes as shown by the equation. complete the equation by filling in the missing parts. 52

Think about how you can use le chatelier’s principle to find possible solutions to the design problem. describe at least two ways to increase the yield (amount) of ammonia based on this principle.