For the predeposition heat treatment of a semiconducting device, gallium atoms are to be diffused into silicon at a temperature of 1150°c for 2.5 h. if the required concentration of ga at a position 2 μm below the surface is 8 x 10^23 atoms/m^3, compute the required surface concentration of ga. assume the following: (i) the surface concentration remains constant (ii) the background concentration is 2 x 10^19 ga atoms/m^3 (iii) preexponential and activation energy values are 3.74 x 10^-5 m^2/s and 3.39 ev/atom, respectively. express your answer in atoms/m3 to three significant figures.

answer:

a

explanation:

fanswer:

explanation:

f

the equation above shows how temperature f, measured in degrees fahrenheit, relates to a temperature c, measured in degrees celsius. based on the equation, which of the following must be true?

a temperature increase of 1 degree fahrenheit is equivalent to a temperature increase of

5

9

degree celsius.

a temperature increase of 1 degree celsius is equivalent to a temperature increase of 1.8 degrees fahrenheit.

a temperature increase of

5

9

degree fahrenheit is equivalent to a temperature increase of 1 degree celsius.

a) i only

b) ii only

c) iii only

d) i and ii only