Consider a cmos process for which lmin=0.25um, tox=6nm, mn=460 cm2/v s and vt=0.5v (from problems 5.10)

a,) find cox, and kn’
b.) for an nmos transistor with w/l=15um/0.25um, calculate the values of vov, vgs, and vdsmin needed to operate the transistor in the saturation region with a dc current id=0.8ma.
c.) for the device in (b), find the value of vov and vgs required to cause the device to operate as a 500 w resistor for very small vds.