Consider a non-ideal (e. g. a realistic junction with fermi level pinning) tungsten schottky barrier on silicon having a constant donor density the junction will be a low-resistance ohmic contact that can pass high currents by tunneling if the barrier presented to the electrons is thin enough. we assume that the onset of efficient tunneling occurs when the fermi level extrapolated from the metal meets the edge of the conduction band at a distance no larger than 9 nm from the interface.(a) what is the minimum nd such that this condition would be met at equilibrium? (b) draw a sketch of the energy band diagram under the condition of (a). (c) assume that nd is increased four times from (a). by what factor is the tunneling distance (wdep) reduced? and by what factor is re reduced?