Engineering, 12.12.2019 05:31 lburch112
Afield transistor with a structure similar has na = 2x10^17cm-3 , qf/q =2x10^11 cm-2 and an n+ poly-si local interconnect as the gate electrode. if the requirement for sufficient isolation between the field device and well is vt ≥ 20v, calculate the minimum field oxide thickness. assume that fermi level of n+ polysilicon coincides with ec.
(b) a mosfet has a threshold voltage of vt = 0.6v, a subthreshold swing of 90 mv/decade and a drain current of 0.1μa at vt. what is the sub-threshold leakage current at vg = 0v?
(c) for the device in problem 5(b), calculate the reverse substrate voltage required in order to decrease the sub-threshold leakage current by one order of magnitude or one decade. na=3x10^17cm-3 , d= 6 nm. hint: every one decade decrease of sub-vt leakage current => 90 mv increase in vt => δvt=90 mv or 0.09v [for problem 5(b)].
Answers: 3
Engineering, 04.07.2019 18:10
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Engineering, 04.07.2019 18:10
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Engineering, 04.07.2019 18:10
Aturning operation is performed with following conditions: rake angle of 12°, a feed of 0.35 mm/rev, and a depth of cut of 1.1 mm. the work piece is aluminum alloy 6061 with t6 heat treatment (a16061-t6). the resultant chip thickness was measured to be 1.0 mm. estimate the cutting force, fc. use shear stress of 207 mpa and coefficient of friction on the tool face of 0.6.
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Engineering, 04.07.2019 19:10
Acircular aluminum shaft mounted in a journal is shown. the symmetric clearance gap between the shaft and journal is filled with sae 10w-30 oil at t 30°c. the shaft is caused to turn by the attached mass and cord. develop and solve a differential equation for the angular speed of the shaft as a function of time.
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Afield transistor with a structure similar has na = 2x10^17cm-3 , qf/q =2x10^11 cm-2 and an n+ poly-...
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