Engineering, 11.02.2020 23:15 ehaynie
Calculate tunneling probability through 1 nm SiO2 gate insulator and 3 nm HfO2 gate insulator of an field-effect transistor. Energy barriers of penetration of electron through and are 8 and 6 eV respectively. Calculate tunneling leakage current through the gates of an area of 0.1 mm2 .
Answers: 2
Engineering, 03.07.2019 15:10
Ahouse has the following electrical appliance usage (1) single 40w lamp used for 4 hours per day (2) single 60w fan used for 12 hours per day (3) single 200w refrigerator that runs 24 hours per day with compressor run 12 hours and off 12 hours find the solar power inverter size in watt with correction factor of 1.25.
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Engineering, 04.07.2019 18:10
Aflywheel accelerates for 5 seconds at 2 rad/s2 from a speed of 20 rpm. determine the total number of revolutions of the flywheel during the period of its acceleration. a.5.65 b.8.43 c. 723 d.6.86
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Engineering, 04.07.2019 18:10
Determine whether or not it is possible to compress air adiabatically from k to 140 kpa and 400 k. what is the entropy change during this process?
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Engineering, 04.07.2019 18:10
Thermal stresses are developed in a metal when its a) initial temperature is changed b) final temperature is changed c) density is changed d) thermal deformation is prevented e) expansion is prevented f) contraction is prevented
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Calculate tunneling probability through 1 nm SiO2 gate insulator and 3 nm HfO2 gate insulator of an...
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