A thin-film gold conductor for an integrated circuit in a satellite application is deposited from a vapor, and the deposited gold thin film has a high resistivity. It is proposed that the high resistivity is due to a high non-equilibrium vacancy concentration, created when the vapor atoms rapidly condense into the thin film. To reduce the vacancy concentration, it is proposed to anneal (heat) the gold to a temperature that will result in only 1 vacancy for every 108 gold atoms, and then to cool the film slowly to room temperature. The enthalpy of formation for 1 vacancy in gold is equal to 0.94 eV. Specify the temperature

Explanation:

Considering the relation of the equilibrium vacancy concentration ;

nv/N = exp (-ΔHv/KT)

Where T is the temperature at which the vacancy sites are formed

K = Boltzmaan constant

ΔHv = enthalpy of vacancy formation

Rearranging the equation and expressing in term of the temperature and plugging the values given to get the temperature. The detailed steps is as shown in the attached file

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explanation: