MOSFET has the gate length L = 0.6 um, the width W = 10 um, the oxide thickness 4.5 nm and the relative dielectric permittivity 3.9. The electron mobility is 365 cm^2/Vs, the gate-threshold voltage offset V_GT = 3.3 V and the characteristic velocity saturation field Fs = 1.4 e4 V/cm.

a. For the drain voltage corresponding to the onset of saturation, find the channel sheet carrier density ns_dr at the drain end of the channel.
b. Find the saturation current, Isat

For the closed feedwater heater below, feedwater enters state 3 at a pressure of 2000 psia and temperature of 420 °f at a rate of ix10 ibhr. the feedwat extracted steam enters state 1 at a pressure of 1000 psia and enthalpy of 1500 btu/lbm. the extracted er leaves at an enthalpy of 528.7 btu/lbm steam leaves as a saturated liquid. (16) a) determine the mass flow rate of the extraction steam used to heat the feedwater (10) b) determine the terminal temperature difference of the closed feedwater heater

The filament of an incandescent lamp has a temperature of 2000k. calculate the fraction of radiation emitted in the visible light band if the filament is approximated as blackbody

The higher the astm grain size number, the finer the gran is. a)-true b)-false