An npn silicon transistor is biased in the inverse-active mode with VBE 3 V and VBC 0.6 V. The doping concentrations are NE 1018 cm3 , NB 1017 cm3 , and NC 1016 cm3 . Other parameters are xB 1 m, E0 B0 C0 2 107 s, DE 10 cm2 /s, DB 20 cm2 /s, DC 15 cm2 /s, and A 103 cm2 . (a) Calculate and plot the minority carrier distribution in the device. (b) Calculate the collector and emitter currents. (Neglect geometry factors and assume the recombination factor is unity.)

Consider a large isothermal enclosure that is maintained at a uniform temperature of 2000 k. calculate the emissive power of the radiation that emerges from a small aperture on the enclosure surface. what is the wavelength ? , below which 10% of the emission is concentrated? what is the wavelength ? 2 above which 10% of the emission is concentrated? determine the wavelength at which maximum spectral emissive power occurs. what is the irradiation incident on a small object placed inside the enclosure?