Engineering, 07.03.2020 03:28 aidy7267
The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than 0.15 for uniform etching. Suppose a 200 mm diameter silicon wafer is etched at a rate of 50.0 nm/min in a CF4 plasma.(a) How many Si atoms are removed per minute?(b) What evolution rate of SiF4 does this correspond to in standard cubic centimeters per minute?(c) What minimum flow rate of CF4 should be maintained?
Answers: 2
Another question on Engineering
Engineering, 04.07.2019 18:10
Fluids at rest possess no flow energy. a)- true b)- false
Answers: 3
Engineering, 04.07.2019 18:10
The filament of an incandescent lamp has a temperature of 2000k. calculate the fraction of radiation emitted in the visible light band if the filament is approximated as blackbody
Answers: 2
Engineering, 04.07.2019 18:20
Have a greater impact on maintenance productivity than any other support group. (clo5) a)-the top management b)-inventory and purchasing c)-sub-contracting d)-cmms
Answers: 2
Engineering, 04.07.2019 18:20
A2-m rigid tank initially contains saturated water vapor at 100 kpa. the tank is connected to a supply line through a valve. steam is flowing in the supply line at 600 kpa and 300 c. the valve is opened, and steam is allowed to enter the tank until the pressure in the tank reaches the line pressure, at which point the valve is closed. a thermometer placed in the tank indicates that the temperature at the final state is 200°c. determine (a) the mass of steam that has entered the tank (b) the amount of heat transfer.
Answers: 3
You know the right answer?
The ratio of the rate of etch-product formation to the flow rate of etch gas should be greater than...
Questions
English, 29.11.2020 21:50
History, 29.11.2020 21:50
Mathematics, 29.11.2020 21:50
Mathematics, 29.11.2020 21:50
Mathematics, 29.11.2020 21:50
Computers and Technology, 29.11.2020 21:50
Computers and Technology, 29.11.2020 21:50
Advanced Placement (AP), 29.11.2020 21:50
English, 29.11.2020 21:50
Spanish, 29.11.2020 21:50
Mathematics, 29.11.2020 21:50
English, 29.11.2020 21:50
