Problem 3 (15 points): An MOS capacitor is made from a 200 nm thick layer of silicon dioxide. The work functions of the metal and the semiconductor are the same. After specialized radiation treatment, the oxide layer traps charge with a surface concentration of OT = 4 × 10−9 C/cm2 . Calculate the effect of these trapped charges on the flat band voltage (VFB) of the MOS capacitor if the charge distribution in the oxide depends on the position linearly, starting from 0 C/ cm3 at the metal-oxide surface and increasing to 0.0004 C/ cm3 at the oxidesemiconductor surface. Give your answer in volts.