Engineering, 17.04.2020 04:39 mprjug6
A Si wafer of diameter D is placed at a height H above a small planar evaporation source. The evaporation flux is proportional to cos q where q is the angle the flux makes with the normal to the plane source. Derive an expression for the ratio of the deposited film thickness at the center of wafer to the deposited film thickness at the edge of the wafer in terms of D and H.
Answers: 1
Engineering, 04.07.2019 18:10
Machinery that is a key part of the process and without which the plant or process cannot function is classifed as: (clo4) a)-critical machinery b)-essential machinery c)-general purpose machinery d)-none of the specified options.
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Engineering, 04.07.2019 18:20
Find the kinematic pressure of 160kpa. for air, r-287 j/ kg k. and hair al viscosity of air at a temperature of 50°c and an absolute (10 points) (b) find the dynamic viscosity of air at 110 °c. sutherland constant for air is 111k
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Engineering, 04.07.2019 19:10
Plan an experiment to measure the surface tension of a liquid similar to water. if necessary, review the ncfmf video surface tension for ideas. which method would be most suitable for use in an undergraduate laboratory? what experimental precision could be expected?
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Engineering, 04.07.2019 19:10
Aplate of dimensions 3 m x 3 m is placed 0.37 mm apart from a fixed plate. the plate requires a force of 2n to move at speed of 45 cm/s. evaluate the viscosity of the fluid in between the plates
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A Si wafer of diameter D is placed at a height H above a small planar evaporation source. The evapor...
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