Engineering, 15.07.2020 01:01 pison3163

A) Assuming a silicon junction breaks down when its maximum internal electric field Em reaches 300 kV/cm, estimate the breakdown voltage BV of the pn junction with the following characteristics: ND = 1016 cm-3

Emo = 5.03E4 V/cm cross-sectional area: A= (100 micrometers)(100 micrometers)= 10-4 cm2

Xd0 = 3.26E-5 cm = 0.326 micrometers Qj0 = 5.23 pC

xpo = .003 micrometers xn0 = .323 micrometers

b) Repeat if ND is doubled to 2E16 cm-3

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