An NMOS transistor is fabricated in a 0.5-μm process having k n = 200 μA/V2 and V A = 20 V/μm of channel length. If L = 1.5 μm and W = 15 μm, find VA and λ. Find the value ofID that results when the device is operated with an overdrive voltage of 0.5 V and VDS = 2 V. Also, find the value of ro at this operating point. If VDS is increased by 1 V, what is the corresponding change in ID?

Consider a large isothermal enclosure that is maintained at a uniform temperature of 2000 k. calculate the emissive power of the radiation that emerges from a small aperture on the enclosure surface. what is the wavelength ? , below which 10% of the emission is concentrated? what is the wavelength ? 2 above which 10% of the emission is concentrated? determine the wavelength at which maximum spectral emissive power occurs. what is the irradiation incident on a small object placed inside the enclosure?

Water at 55c flows across a flat plate whose surface temperature is held constant at 95c. if the temperature gradient at the plate's surface for a given value of x is 18 c/mm, find a) local heat transfer coefficient. b) heat flux

Which of the following components of a pid controlled accumulates the error over time and responds to system error after the error has been accumulated? a)- proportional b)- derivative c)- integral d)- on/off.