A semiconductor, in thermal equilibrium, has a hole concentration of p0 = 2x1016 cm-3. The minority carrier life time = 3x10-7 s. (Assume, ni = 1010 cm-3) (a) Determine the thermal equilibrium recombination rate of electrons.
(b) Determine the recombination rate of electrons if an excess electron concentration of În = 1013 cm-3 exists.
(c) Calculate the change in the recombination rate when excess electron concentration exists (compared to thermal equilibrium).

Explanation:

= Hole concentration =

= Intrinsic concentration =

= Minority carrier life time =

= Excess concentration of electrons =

Majority carrier electron concentration is given by

Recombination rate is given by

The recombination rate is

Recombination rate is given by

The recombination rate is

Change in the recombination rate is

The change in the recombination rate is

answer:

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Explanation: