Engineering, 19.03.2021 15:00 gemouljr
In a metal-oxide-semiconductor (MOS) device, a thin layer of SiO2 (density = 2.20 Mg/m3) is grown on a single crystal chip of silicon. How many Si atoms and how many O atoms are present per square millimeter of the oxide layer? Assume that the layer thickness is 160 nm.
Answers: 1
Engineering, 04.07.2019 18:10
Atmospheric air has a temperature (dry bulb) of 80° f and a wet bulb temperature of 60° f when the barometric pressure is 14.696 psia. determine the specific humidity, grains/lb dry air. a. 11.4 c. 55.8 d. 22.5 b. 44.1
Answers: 1
Engineering, 04.07.2019 18:10
The flow rate of air through a through a pipe is 0.02 m5/s. a pitot static tube is placed in the flow. the radius of the pitot static tube is 1 mm. assuming the flow to be steady and the air to be at 300k, calculate the difference in total and static pressure if the diameter of the pipe is: (a) d 0.1 m d 0.05 m (c) d 0.01 m
Answers: 2
Engineering, 04.07.2019 18:20
Find the minimum film thickness for a journal bearing with the data below. shaft diameter, d-50 mm, clearance ratio, cdratio? 0.001, shaft speed, n 2000 rpm; bearing length. i 200 mm; eccentricity ration, ? -0.55. ( note, cdratio-ca/d) the minimum film thickness is um
Answers: 2
Engineering, 04.07.2019 18:20
Apiston-cylinder device contains 0.1 m3 of liquid water and 0.9 m3 of water vapor in equilibrium at 800 kpa. heat is transferred at constant pressure until the temperature of water reaches 350 °c. determine (a) the quality of water at the initial state (b) the work associated with this process, (c) the heat associated with this process.
Answers: 2
In a metal-oxide-semiconductor (MOS) device, a thin layer of SiO2 (density = 2.20 Mg/m3) is grown on...
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