If we have silicon at 300K with 10 microns of p-type doping of 4.7*1016/cc and 10 microns of n-type doping 4.2*1014/cc, what applied bias will completely deplete one side of the diode? Use three significant digits and fixed notation). The diode is square with an edge length of 10 microns. Assume p and n mobilities are 500 & 1500 cm^2/(V*s) respectively. Assume there is no breakdown.

Amixture of slurry and mud is to be pumped through a horizontal pipe of diameter 500 mm. the fluid behaves as a bingham plastic with a yield stress of 30 pa and viscosity 0.04 pa.s. describe the effects of the shear stress through a transverse section of the pipe by plotting the variation in shear stress and velocity profile: (i) just before the slurry starts to move (ii) as the slurry flows when the pressure gradient is double that in part (i)