Ms contacts - energy-band diagrams a number of ms contacts are formed on si substrates maintained at t = 300k. for each of the contacts listed below, draw the energy-band diagram (indicating the schottky-barrier height db, the depletion- layer width w, ec - ef in the neutral region, and the built-in potential v bi ), and indicate whether the contact is ohmic or rectifying: a) an ideal contact between al ((pm= 4.1ev) and n-type silicon with np = 1017 cm3, va= 0v b) an ideal contact between al (pm= 4.1ev) and p-type silicon with na = 1017 cm3, va= 0 v. c) an ideal contact between al (pm=4.1ev) and p-type silicon with na = 1017cm3, va= -0.5 v. d) a contact between nisi and n-type silicon with np = 1017 cm3, with va= 0 v. e) a contact between nisi and p-type silicon with na = 1017cm3, with va= 0 v. note: for the nisi contacts, use the schottky barrier values given in lecture notes