a solar cell is fabricated by diffusing phosphorus (n dopant) from a constant surface source of 1020 atoms/cm3 into a p-type si wafer containing 1016 boron atoms/cm3. the diffusivity of phosphorus is 10-12 cm2/s, and the diffusion time is 1 hour. how far from the surface is the junction depth, i. e., where cn-c,?
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