Biased sip-n junction a si p-n junction with area of 0.001 cm* is formed with an acceptor concentration of na 1x1015 cm3 on the p-side and a donor concentration of na- 1x10" cmon the n-side. calculate at 300 k (a) the diffusion voltage vd (b) the space charge width at equilibrium and with zero bias (c) the current with forward bias of 0.5 ev. assume that the current is diffusion dominated. the electron and hole mobilities are ln-1500 cm2/(vs) and μ,-450 cm2/(vs), the recombination lifetimes are τη-τp-2.5 ms. do electrons or holes carry most of the current, and why? if you want to double the electron current, what do you need to do?