Unbiased si p-n junction (a) boron atoms are implanted into a n-type si sample (na 1x1016cm), forming an abrupt junction (schottky model) of square cross section with area of 2x 103 cm2. the resulting acceptor concentration in the p-type region is na -4x1018 cm3. calculate the diffusion voltage vd, the spatial extends dn an dp of the space-charge zones in the n and p region, the charge 2+ in the space charge region on the p side as well as the electric field of & (0) for this junction at equilibrium at 300 k. (b) sketch & x) and the charge densities px) on both sides of the p-n junction