An channel moseei of has a gate length of 1 micrometer, base doping of 1e17/cm3 and width z of 10 micrometer. vt=1 v. it is used in a standard amplifier circuit, with a gate battery of 3v and a drain battery of 20 v. the load resistance is 1k. draw the dc and ac equivalent ircuits and calculate the dc quiescent conditions, transconductance and amplification factor. calculate the breakdown voltage for the mosfet of problem 1, given that the avalanche field is 5e5v/cm.

Athin nonconducting rod with a uniform distribution of positive charge q is bent into a circle of radius r. the central perpendicular axis through the ring is a z-axis, with the origin at the center of the ring. a) what is the magnitude of the electric field due to the rod at z = 0? n/c (b) what is the magnitude of the electric field due to the rod at z = infinity? n/c (c) in terms of r, at what positive value of z is that magnitude maximum? r (d) if r = 4.00 cm and q = 9.00 µc, what is the maximum magnitude? n/c