Determine the metal oxide semiconductor work function difference and the threshold voltage for silicon mos device at t=300k for the following parameters: polysilicon gate, na =2x10¹6,to=8nm, q'ss=2x10¹0.

Aperson stands on a platform, initially at rest, that can rotate freely without friction. the moment of inertia of the person plus the platform is ip. the person holds a spinning bicycle wheel with its axis horizontal. the wheel has moment of inertia iw and angular velocity ωw. take the ωw direction counterclockwise when viewed from above. part a what will be the angular velocity ωp of the platform if the person moves the axis of the wheel so that it points vertically upward?