Asemiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. the semiconductor is n-type with no = 10 cm. if the excess electron concentration in the steady state is an = 1015 cm and if t. 10 usec (minority carrier life time), then the generation rate due to irradiation is (a) - 1020 e-h pair/cm/s no 104 (b) - 1024 e-h pair/cm/s an 105 (c) - 100 e-h pair/cm/s (d) cannot be determined