Holes are being steadily injected into a region of n-type silicon (connected to other devices, the details of which are not important for this question). in the steady state, the excess-hole concentration profile shown in fig. p3.10 is established in the n-type silicon region. here "excess" means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted pn0. if nd = 1016/cm3, ni =1.5×1010/cm3, dp =12 cm2/s, and w =50 nm, find the density of the current that will flow in the x direction.

  the grams     of oxygen gas   that can be produced     is 20.6   grams of o₂

calculation

2liclo₃ →   2 licl + 3 o₂

step 1:   find the moles of liclo₃

moles = mass÷ molar mass

from periodic table the molar mass of liclo₃ =6.9 +35.5   +(16 x3) =90.4 g/mol

moles=38.7 g÷90.4 g/mol=0.4281   moles

step 2:   use the   mole ratio   to calculate the moles of o2

from equation above, liclo₃: o₂   is 2: 3  

therefore the moles of   o₂=0.4281 moles x3/2 =0.6422   moles

step 3: find mass   of o₂

mass= moles x molar mass

from periodic table the   molar mass of   o₂ = 16 x2= 32 g/mol

mass=0.6422   moles   x   32 g/mol = 20.6 grams of o₂

the maxium height is 34m/s