Consider a conduction (free) electron in high-purity si crystal with mobility μn = 1350 cm2/v-s that moves in the si bar of length 1 mm. a voltage of 10 v is applied to the opposite ends of the bar. compare the drift velocity of this electron with its mean thermal velocity v0 related to thermal energy kt through the relationship eth = (m v02)/2. repeat your calculation for a voltage of 5x103 v, using the same value of effective mass. comment on the actual effect of such high electric field on the electron mobility.