We inject holes into a p-type semiconductor bar (na = 1017 cm-3 ) 180 nm long such that steady state total hole concentration changes from 1.5 x1017cm-3 to 1.1 x1017cm-3 from the starting point to the end point of the semiconductor bar. if the mobility of the holes is 500 cm2 /v-s, and the cross-sectional area is 0.5 cm-2 , what is the hole current at the middle of the semiconductor bar? sketch the hole concentration variation across the bar indicating relevant equations. (assume �p= 10-10 s)