There is a moscap structure with n-type si and nd = 10¹⁶/cm³ and vfb = 0. let the m-o-s direction be the x-axis, x=0 at the oxide-si interface and x increases as it goes into the bulk of the si. now define the band bending ψ(x) = − " # [ei(x) – ei (bulk)].
(a) how do you determine accumulation, depletion and inversion from ψ(0)?
(b) express n(x), p(x) in terms of ψ(x) in the si.
(c)assuming complete ionization, express the poisson’s equation in the si in terms of ψ(x).