Ap-channel enhancement-mode mosfet with 50 nm thick hfo2 high-k gate dielectric (εr=25) has a threshold voltage of -0.6v. the effective hole channel mobility is 150 cm2 /v-s. what is the drive current for a 50 μm wide and 2 μm long device at vg= -3v and vd= -0.05v? what is the saturation current at this gate bias?
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