3. consider an mos capacitor with n+ polysilicon gate and n-type silicon substrate. assume nd=1016cm-3 and let ef-ec=0.2 ev in the n+ polysilicon. assume the oxide has a thickness of tox= 300å. also assume that (polysilicon)=(crystal silicon). (a) calculate the metal-semiconductor work function difference. (b) calculate the threshold voltage for the ideal case of zero fixed oxide charge and zero interface states