An ideal n-channel MOSFET has the following parameters: VT 0.45 V, n 425 cm2 /V-s, tox 11 nm 110 Å, W 20 m, and L 1.2 m. (a) Plot ID versus VDS for 0 VDS 3 V and for VGS 0, 0.6, 1.2, 1.8, and 2.4 V. Indicate on each curve the VDS (sat) point. (b) Plot ID (sat) versus VGS for 0 VGS 2.4 V. (c) Plot ID versus VGS for 0 VGS 2.4 V and for VDS 0.1 V.

W= fd
where f is an applied force and d is the distance over which it is applied. when a parachuting skydiver is at constant velocity, he is experiencing "terminal velocity", the point at which his acceleration down is canceled out by air resistance. that means that the resisting force of the air is equal to his weight, but in the opposite direction. with this, we can solve for the work done by the force.
w = fd
w = (92.0)(9.81 m/s^2) (325)
w= 2.93 x 10^5 j
the value for work in this case is positive because it is pushing up on the skydiver, who has a downward force of gravity.
therefore the answer is 2.93 x 10^5 j

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Idk just need points

Two 10¢  coins  (dimes)  carrying identical charges  are  lying 2.5 m apart  on a  table.  if each  of  these coins experiences  an  electrostatic force  of  magnitude 2.0 n due  to the  other coin.  the charge on each coin is :     52.2 uc