A metal–semi-conductor junction is formed between a metal with a work function of 4.3 eV and p-type silicon with an electron affinity of 4.0 eV. The acceptor doping concentration in the silicon is Na = 5 x 1016 cm-3. Assume T = 300 K.
A) Sketch the thermal equilibrium energy-band diagram.
B) Determine the height of the Schottky barrier.
C) Sketch the energy-band diagram with an applied reverse-biased voltage of VR = 3 V.
D) Sketch the energy-band diagram with an applied forward-bias voltage of Va = 0.25 V.
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