Engineering, 22.08.2019 04:20 Asterisk
Atransistor is made by doping silicon (si) wafer with different phosphorus (p) dopants. it was given that si wafer contains no p to begin with. the diffusion coefficient of pin si is 6.5 x 10^-13 cm^2/s at temperature of 1100 c. assume the source provides a surface concentration of 10^20 atoms/cm^3 and diffusion time is one hour. compute the depth at which the concentration of p will be 10^18 atoms/cm^3 by using fick's second law.
Answers: 1
Engineering, 03.07.2019 14:10
If the thermal strain developed in polyimide film during deposition is given as 0.0044. assume room temperature is kept at 17.3 c, and thermal coefficient of expansion for the film and the substrate are 54 x 10^-6c^-1 and 3.3 x 10^-6c^-1respectively. calculate the deposition temperature.
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Atransistor is made by doping silicon (si) wafer with different phosphorus (p) dopants. it was given...
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