Engineering, 11.04.2020 05:16 isabhb4227
If we have silicon at 300K with 10 microns of p-type doping of 4.31*10A17/cc and 10 microns of n-type doping 1000 times less, what is the total resistance in ohms outside the depletion region on the p-type side and at zero bias (use three significant digits and exponential notation). The diode is square with an edge length of 78 microns.
Assume p and n mobilities are 500 & 1500 cmA2/(V*s) respectively.
Answers: 3
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If we have silicon at 300K with 10 microns of p-type doping of 4.31*10A17/cc and 10 microns of n-typ...
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