Engineering, 08.05.2021 03:00 sophie5064

The electron concentration in silicon at T = 300 K is given by n(x) = 10^16 exp (-x/18) cm3
where x is measured in m and is limited to 0< or is equal to x < or is equal to 25 m. The electron diffusion coefficient is Dn = 25 cm2/s and the electron mobility is mun = 960 cm2/V-s. The total electron current density through the semi-conductor is constant and equal to Jn = 40 A/cm2. The electron current has both diffusion and drift current components. Determine the electric field as a function of x-bar which must exist in the semi-conductor.

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The electron concentration in silicon at T = 300 K is given by n(x) = 10^16 exp (-x/18) cm3
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